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| NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage (RBE = ), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation, PC TA = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7W TC = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Symbol Test Conditions Min 5 60 25 - - 10 16 60 Typ - - - - - 50 18 70 Max Unit - - - 100 100 180 - - V V V A A - W % V(BR)EBO IE = 5mA, IC = 0 V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 10mA, RBE = ICBO IEBO hFE PO hC VCB = 30V, IE = 0 VEB = 4V, IC = 0 VCE = 12V, IC = 10mA, Note 1 VCC = 12V, Pin = 1W, f = 27MHz VCC = 12V, Pin = 1W, f = 27MHz Note 1. Pulse Test: Pulse Width = 150s, Duty Cycle = 5%. .358 (9.1) .051 (1.3) .142 (3.62) Dia .126 (3.2) C .485 (12.32) .395 (9.05) B C E .189 (4.8) .485 (12.32) Min .100 (2.54) .177 (4.5) .019 (0.48) .347 (9.5) .122 (3.1) |
Price & Availability of NTE236
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